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mw6s010nr1 MW6S010GNR1 1 rf device data freescale semiconductor rf power field effect transistors n - channel enhancement - mode lateral mosfets designed for class a or class ab base station applications with frequencies up to 1500 mhz. suitable for analog and digital modulation and multicarrier amplifier applications. ? typical two - tone performance at 960 mhz: v dd = 28 volts, i dq = 125 ma, p out = 10 watts pep power gain ? 18 db drain efficiency ? 32% imd ? - 37 dbc ? capable of handling 10:1 vswr, @ 28 vdc, 960 mhz, 10 watts cw output power features ? characterized with series equivalent large - signal impedance parameters ? on - chip rf feedback for broadband stability ? qualified up to a maximum of 32 v dd operation ? integrated esd protection ? 225 c capable plastic package ? rohs compliant ? in tape and reel. r1 suffix = 500 units per 24 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain - source voltage v dss - 0.5, +68 vdc gate - source voltage v gs - 0.5, +12 vdc storage temperature range t stg - 65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 80 c, 10 w pep r jc 2.85 c/w 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/development tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. document number: mw6s010n rev. 5, 6/2009 freescale semiconductor technical data mw6s010nr1 MW6S010GNR1 450 - 1500 mhz, 10 w, 28 v lateral n - channel broadband rf power mosfets case 1265 - 09, style 1 to - 270 - 2 plastic mw6s010nr1 case 1265a - 03, style 1 to - 270 - 2 gull plastic MW6S010GNR1 ? freescale semiconductor, inc., 2005 - 2006, 2008 - 2009. all rights reserved.
2 rf device data freescale semiconductor mw6s010nr1 MW6S010GNR1 table 3. esd protection characteristics test methodology class human body model (per jesd22 - a114) 1a machine model (per eia/jesd22 - a115) a charge device model (per jesd22 - c101) iii table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22 - a113, ipc/jedec j - std - 020 3 260 c table 5. electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 68 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 100 adc) v gs(th) 1.5 2.3 3 vdc gate quiescent voltage (v dd = 28 vdc, i d = 125 madc, measured in functional test) v gs(q) 2 3.1 4 vdc drain - source on - voltage (v gs = 10 vdc, i d = 0.3 adc) v ds(on) ? 0.27 0.35 vdc dynamic characteristics reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 0.32 ? pf output capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 10 ? pf input capacitance (v ds = 28 vdc, v gs = 0 vdc 30 mv(rms)ac @ 1 mhz) c iss ? 23 ? pf functional tests (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq = 125 ma, p out = 10 w pep, f = 960 mhz, two - tone test, 100 khz tone spacing power gain g ps 17.5 18 20.5 db drain efficiency d 31 32 ? % intermodulation distortion imd ? -37 -33 dbc input return loss irl ? -18 -10 db typical performances (in freescale 450 mhz demo board, 50 hm system) v dd = 28 vdc, i dq = 150 ma, p out = 10 w pep, 420 - 470 mhz, two - tone test, 100 khz tone spacing power gain g ps ? 20 ? db drain efficiency d ? 33 ? % intermodulation distortion imd ? -40 ? dbc input return loss irl ? -10 ? db
mw6s010nr1 MW6S010GNR1 3 rf device data freescale semiconductor figure 1. mw6s010nr1(gnr1) test circuit schematic ? 900 mhz c9 c2 + rf output c5 v bias c3 + v supply rf input z1 c1 z2 z3 z4 c8 r1 dut c4 b1 c6 c7 c10 z5 l1 c14 z6 c17 c20 z7 c11 c12 c13 c15 c16 + c18 + c19 + z5 0.313 x 0.902 microstrip z6 0.073 x 1.080 microstrip z7 0.073 x 0.314 microstrip pcb rogers ultralam 2000, 0.031 , r = 2.55 z1 0.073 x 0.223 microstrip z2 0.112 x 0.070 microstrip z3 0.213 x 0.500 microstrip z4 0.313 x 1.503 microstrip table 6. mw6s010nr1(gnr1) test circuit component designations and values ? 900 mhz part description part number manufacturer b1 ferrite bead 2743019447 fair - rite c1, c6, c11, c20 47 pf chip capacitors atc100b470jt500xt atc c2, c18, c19 22 f, 35 v tantalum capacitors t491d226k035at kemet c3, c16 220 f, 63 v electrolytic capacitors, radial 2222 - 136 - 68221 vishay c4, c15 0.1 f chip capacitors cdr33bx104akws kemet c5, c8, c17 0.8 - 8.0 pf variable capacitors, gigatrim 272915l johanson c7, c12 24 pf chip capacitors atc100b240jt500xt atc c9, c10, c13 6.8 pf chip capacitors atc100b6r8jt500xt atc c14 7.5 pf chip capacitor atc100b7r5jt500xt atc l1 12.5 nh inductor a04t - 5 coilcraft r1 1 k , 1/4 w chip resistor crcw12061001fkea vishay
4 rf device data freescale semiconductor mw6s010nr1 MW6S010GNR1 figure 2. mw6s010nr1(gnr1) test circuit component layout ? 900 mhz c3 mw6s010n c4 c7 c10 c6 b1 c2 c1 c5 c8 c9 r1 l1 c16 c18 c19 c15 c12 c11 c13 c14 c17 c20
mw6s010nr1 MW6S010GNR1 5 rf device data freescale semiconductor typical characteristics ? 900 mhz 970 16 48 910 ?26 ?8 irl g ps imd f, frequency (mhz) v dd = 28 vdc, p out = 10 w (avg.) i dq = 125 ma, 100 khz tone spacing 44 ?10 40 ?12 36 ?14 32 ?16 28 ?18 24 ?20 20 ?22 930 950 960 figure 3. two - tone wideband performance @ p out = 10 watts p out , output power (watts) avg. 15 20 1 i dq = 190 ma v dd = 28 vdc, f = 945 mhz two?tone measurements 100 khz tone spacing 19 17 16 10 100 figure 4. two - tone power gain versus output power 100 ?70 ?10 0.1 7th order v dd = 28 vdc, i dq = 125 ma f = 945 mhz, two?tone measurements 100 khz tone spacing 5th order 3rd order 110 ?20 ?30 ?40 ?50 ?60 p out , output power (watts) avg. figure 5. intermodulation distortion products versus output power imd, intermodulation distortion (dbc) g ps , power gain (db) irl, input return loss (db) imd, intermodulation distortion (dbc) 10 ?55 ?15 0.1 7th order two?tone spacing (mhz) v dd = 28 vdc, p out = 10 w (avg.) i dq = 125 ma, two?tone measurements (f1+f2)/2 = center frequency = 945 mhz 5th order 3rd order ?20 ?25 ?30 ?35 ?40 1 100 figure 6. intermodulation distortion products versus tone spacing 29 48 p3db = 43.14 dbm (20.61 w) p in , input power (dbm) v dd = 28 vdc, i dq = 125 ma pulsed cw, 8 sec(on), 1 msec(off) f = 945 mhz 46 44 42 40 38 21 23 25 actual ideal 27 19 figure 7. pulse cw output power versus input power imd, intermodulation distortion (dbc) p out , output power (dbm) 920 940 18 90 ma 125 ma p1db = 42.23 dbm (16.71 w) ?50 ?45 ?24 0.1 d , drain efficiency (%), g ps , power gain (db) d
6 rf device data freescale semiconductor mw6s010nr1 MW6S010GNR1 typical characteristics ? 900 mhz acpr (dbc) 0 ?60 p out , output power (watts) avg. 50 ?10 40 ?20 30 ?30 20 ?40 10 ?50 0.1 1 10 g ps acpr v dd = 28 vdc i dq = 125 ma f = 945 mhz figure 8. single - carrier cdma acpr, power gain and power added efficiency versus output power 100 15 20 0.1 0 50 t c = ?30 c 25 c ?30 c 10 1 19 18 17 16 40 30 20 10 p out , output power (watts) cw figure 9. power gain and power added efficiency versus output power g ps , power gain (db) g ps p out , output power (watts) cw figure 10. power gain versus output power i dq = 125 ma f = 945 mhz 14 15 19 012 17 16 18 468 g ps , power gain (db) 0 24 500 ?25 5 s21 f, frequency (mhz) figure 11. broadband frequency response s11 20 0 16 ?5 12 ?10 8 ?15 4 ?20 1200 1100 1000 900 800 700 600 v dd = 28 vdc p out = 10 w cw i dq = 125 ma s11 (db) s21 (db) 85 c 25 c 85 c 16 10 2 v dd = 28 vdc i dq = 125 ma f = 945 mhz v dd = 24 v 28 v 32 v d d , drain efficiency (%), g ps , power gain (db) d d , drain efficiency (%)
mw6s010nr1 MW6S010GNR1 7 rf device data freescale semiconductor typical characteristics figure 12. mttf factor versus junction temperature 250 10 8 90 t j , junction temperature ( c) this above graph displays calculated mttf in hours when the device is operated at v dd = 28 vdc, p out = 10 w pep, and d = 32%. mttf calculator available at http://www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. 10 6 10 5 10 4 110 130 150 170 190 mttf (hours) 210 230 10 7
8 rf device data freescale semiconductor mw6s010nr1 MW6S010GNR1 f mhz z source z load 800 820 840 3.1 + j1.9 2.7 + j2.2 2.8 + j1.7 10.1 + j2.3 8.3 + j2.5 8.2 + j3.3 v dd = 28 vdc, i dq = 125 ma, p out = 10 w pep 860 880 900 3.1 + j3.4 2.9 + j3.7 3.3 + j3.8 9.8 + j4.8 10.6 + j5.6 9.5 + j5.5 920 940 960 2.8 + j4.4 3.2 + j4.9 3.0 + j4.7 10.1 + j5.9 11.0 + j6.4 11.8 + j6.6 980 3.6 + j5.2 12.1 + j7.1 figure 13. series equivalent source and load impedance ? 900 mhz z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network f = 800 mhz f = 980 mhz z o = 25 f = 800 mhz f = 980 mhz z load z source
mw6s010nr1 MW6S010GNR1 9 rf device data freescale semiconductor figure 14. mw6s010nr1(gnr1) test circuit schematic ? 450 mhz c5 c2 + rf output c6 v bias v supply rf input z1 c9 z5 r6 dut b2 c4 z6 l1 c12 c11 c10 z5 0.475 x 0.330 microstrip z6 0.475 x 0.325 microstrip z8 1.250 x 0.080 microstrip pcb rogers ultralam 2000, 0.030 , r = 2.55 z1 0.540 x 0.080 microstrip z2 0.365 x 0.080 microstrip z3 0.225 x 0.080 microstrip z4, z7 0.440 x 0.080 microstrip c7 z2 c8 z3 z4 c3 c1 + r2 r5 r1 t1 r3 r4 t2 z8 z7 b1 c13 c14 c15 + table 7. mw6s010nr1(gnr1) test circuit component designations and values ? 450 mhz part description part number manufacturer b1, b2 ferrite bead 2743019447 fair - rite c1 1 f, 35 v tantalum capacitor t491c105k050at kemet c2, c15 22 f, 35 v tantalum capacitors t491x226k035at kemet c3, c14 0.1 f chip capacitors c1210c104k5rac kemet c4, c9, c10, c13 330 pf chip capacitors atc700a331jt150xt atc c5 4.3 pf chip capacitor atc100b4r3jt500xt atc c6, c11 0.6 - 8.0 pf variable capacitors 27291sl johanson c7, c8, c12 4.7 pf chip capacitors atc100b4r7jt500xt atc l1 39 h chip inductor isc - 1210 vishay r1 10 chip resistor crcw080510r0fkea vishay r2 1 k chip resistor crcw08051001fkea vishay r3 1.2 k chip resistor crcw08051201fkea vishay r4 2.2 k chip resistor crcw08052201fkea vishay r5 5 k potentiometer 1224w bourns r6 1 k chip resistor crcw12061001fkea vishay t1 5 volt regulator, micro 8 lp2951cdmr2g on semiconductor t2 npn transistor, sot - 23 bc847alt1g on semiconductor
10 rf device data freescale semiconductor mw6s010nr1 MW6S010GNR1 figure 15. mw6s010nr1(gnr1) test circuit component layout ? 450 mhz mw6s010n 450 mhz c5 c10 c6 c7 c8 c9 r6 c4 c2 c3 b1 r5 c1 r2 r1 r3 r4 t1 t2 b2 c14 c13 c15 l1 c12 c11
mw6s010nr1 MW6S010GNR1 11 rf device data freescale semiconductor typical characteristics ? 450 mhz irl, input return loss (db) acpr (dbc), alt1 (dbc) 500 400 irl g ps acpr f, frequency (mhz) figure 16. 2 - carrier w - cdma broadband performance @ p out = 3 watts avg. ?21 ?6 ?9 ?12 ?15 v dd = 28 vdc, p out = 3 w (avg.), i dq = 150 ma 2?carrier w?cdma, 10 mhz carrier spacing, 3.84 mhz channel bandwidth, par = 8.5 db @ 0.01% probability (ccdf) 18.4 20.4 ?65 37 34 31 28 ?40 ?45 ?50 ?55 d , drain efficiency (%) d g ps , power gain (db) 25 ?60 ?18 20.2 20 19.8 19.6 19.4 19.2 19 18.8 18.6 410 420 430 440 450 460 470 480 490 alt1 irl f, frequency (mhz) figure 17. 2 - carrier w - cdma broadband performance @ p out = 7.5 watts avg. d ?50 irl, input return loss (db) acpr (dbc), alt1 (dbc) 500 400 ?14 ?4 ?6 ?8 ?10 16.5 19 ?55 55 50 45 40 ?30 ?35 ?40 ?45 d , drain efficiency (%) g ps , power gain (db) 35 ?12 18.8 18.5 18.3 18 17.8 17.5 17.3 17 16.8 410 420 430 440 450 460 470 480 490 s11 f, frequency (mhz) figure 18. broadband frequency response v dd = 28 vdc p out = 10 w i dq = 150 ma 650 50 5 30 ?25 0 ?5 ?15 ?20 s11 s21 ?10 25 20 15 10 100 150 200 250 300 350 400 450 500 s21 550 600 v dd = 28 vdc, p out = 7.5 w (avg.), i dq = 150 ma 2?carrier w?cdma, 10 mhz carrier spacing, 3.84 mhz channel bandwidth, par = 8.5 db @ 0.01% probability (ccdf) alt1 acpr g ps figure 19. single - carrier n - cdma acpr, alt1 and alt2 versus output power ?80 p out , output power (watts) avg. ?10 ?20 ?30 ?40 ?70 0.1 1 10 ?50 acpr v dd = 28 vdc, i dq = 150 ma, f = 450 mhz, n?cdma is?95 pilot, sync, paging, traffic codes 8 through 13 alt1 & alt2 , channel power ( dbc ) acpr, adjacent channel power ratio (dbc) ?60 alt2 alt1
12 rf device data freescale semiconductor mw6s010nr1 MW6S010GNR1 f mhz z source z load 400 420 440 9.0 + j3.8 9.6 + j6.6 8.8 + j5.4 15.0 + j1.4 14.3 + j3.3 15.0 + j4.7 v dd = 28 vdc, i dq = 150 ma, p out = 10 w pep 460 480 500 10.6 + j9.5 11.5 + j13.9 10.7 + j12.6 16.3 + j7.3 16.4 + j11.1 16.9 + j12.7 figure 20. series equivalent source and load impedance ? 450 mhz z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network f = 400 mhz z o = 25 z load z source f = 500 mhz f = 400 mhz f = 500 mhz
mw6s010nr1 MW6S010GNR1 13 rf device data freescale semiconductor package dimensions
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mw6s010nr1 MW6S010GNR1 19 rf device data freescale semiconductor product documentation, tools and software refer to the following documents to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in plastic packages ? an1949: mounting method for the mhvic910hr2 (pfp - 16) and similar surface mount packages ? an1955: thermal measurement methodology of rf power amplifiers ? an3789: clamping of high power rf transistors and rfics in over - molded plastic packages engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model for software and tools, do a part number search at http://www.freescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 4 dec. 2008 ? changed storage temperature range in max ratings table from - 65 to +175 to - 65 to +150 for standardization across products, p. 1 ? removed total device dissipation from max ratings table as data was redundant (information already provided in thermal characteristics table), p. 1 ? added case operating temperature limit to the maximum ratings table and set limit to 150 c, p. 1 ? operating junction temperature increased from 200 c to 225 c in maximum ratings table, related ?continuous use at maximum temperature will affect mttf? footnote added and changed 200 c to 225 c in capable plastic package bullet, p. 1 ? corrected v ds to v dd in the rf test condition voltage callout for v gs(q) and added ?measured in functional test?, on characteristics table, p. 2 ? corrected c iss test condition to indicate ac stimulus on the v gs connection versus the v ds connection, dynamic characteristics table, p. 2 ? updated part numbers in tables 6, 7, component designations and values, to rohs compliant part numbers, p. 3, 9 ? removed lower voltage tests from fig. 10, power gain versus output power, due to fixed tuned fixture limitations, p. 6 ? replaced fig. 12, mttf versus junction temperature with updated graph. removed amps 2 and listed operating characteristics and location of mttf calculator for device, p. 7 ? replaced case outline 1265 - 08 with 1265 - 09, issue k, p. 1, 13 - 15. corrected cross hatch pattern in bottom view and changed its dimensions (d2 and e3) to minimum value on source contact (d2 changed from min - max .290 - .320 to .290 min; e3 changed from min - max .150 - .180 to .150 min). added jedec standard package number. ? replaced case outline 1265a - 02 with 1265a - 03, issue c, p. 1, 16 - 18. corrected cross hatch pattern and its dimensions (d2 and e2) on source contact (d2 changed from min - max .290 - .320 to .290 min; e3 changed from min - max .150 - .180 to .150 min). added pin numbers. corrected mm dimension l for gull - wing foot from 4.90 - 5.06 min - max to 0.46 - 0.61 min - max. added jedec standard package number. ? added product documentation and revision history, p. 19 5 june 2009 ? modified data sheet to reflect msl rating change from 1 to 3 as a result of the standardization of packing process as described in product and process change notification number, pcn13516, p. 2 ? added an3789, clamping of high power rf transistors and rfics in over - molded plastic packages to product documentation, application notes, p. 19 ? added electromigration mttf calculator and rf high power model availability to product software, p. 19
20 rf device data freescale semiconductor mw6s010nr1 MW6S010GNR1 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2005 - 2006, 2008 - 2009. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1 - 800 - 441 - 2447 or +1 - 303 - 675 - 2140 fax: +1 - 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mw6s010n rev. 5, 6/2009

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